IRFB812PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N CH 500V 3.6A TO220AB
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Buying Options
Total Price: USD $0.12
Unit Price: USD $0.122144
≥1 USD $0.122144
≥10 USD $0.115229
≥100 USD $0.108711
≥500 USD $0.102555
≥1000 USD $0.096748
Inventory: 959
Minimum: 1
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Technical Details
Technical
Resistance 2.2Ohm
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Series HEXFET?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ
Recovery Time 110 ns
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 3V
Continuous Drain Current (ID) 3.6A
Turn-Off Delay Time 24 ns
Fall Time (Typ) 17 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 22ns
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 2.2 Ω @ 2.2A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 14 ns
Power Dissipation 78W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 78W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 15 Weeks
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.83mm
Length 10.67mm
Height 16.51mm
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