SPD04N50C3
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 560V 4.5A DPAK
PDF
/
Buying Options
Total Price: USD $8.15
Unit Price: USD $8.1472
≥1 USD $8.1472
≥10 USD $6.68515
≥100 USD $6.47615
≥500 USD $6.26715
≥1000 USD $6.05815
Inventory: 12508
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Power Dissipation-Max (Abs) 50W
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 130 mJ
DS Breakdown Voltage-Min 500V
Pulsed Drain Current-Max (IDM) 13.5A
Drain-source On Resistance-Max 0.95Ohm
Drain Current-Max (Abs) (ID) 4.5A
JEDEC-95 Code TO-252
Polarity/Channel Type N-CHANNEL
Transistor Application SWITCHING
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin (Sn)
Moisture Sensitivity Level (MSL) 1
Pbfree Code icon-pbfree yes
JESD-609 Code e3
Physical
Transistor Element Material SILICON
Number of Terminals 2
Surface Mount YES
Alternative Model
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