IRFB3206GPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 120A TO220AB
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Buying Options
Total Price: USD $1.11
Unit Price: USD $1.10675
≥1 USD $1.10675
≥10 USD $0.9082
≥100 USD $0.8797
≥500 USD $0.8512
≥1000 USD $0.8227
Inventory: 79854
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 16.51mm
Technical
Avalanche Energy Rating (Eas) 170 mJ
Pulsed Drain Current-Max (IDM) 840A
Drain to Source Breakdown Voltage 60V
Drain Current-Max (Abs) (ID) 120A
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 210A
Turn-Off Delay Time 55 ns
Fall Time (Typ) 83 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 82 ns
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Input Capacitance (Ciss) (Max) @ Vds 6540pF @ 50V
Vgs(th) (Max) @ Id 4V @ 150μA
Rds On (Max) @ Id, Vgs 3m Ω @ 75A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 19 ns
Case Connection DRAIN
Power Dissipation 300W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 3MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Series HEXFET?
Published 2009
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 13 Weeks
Alternative Model
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