Avalanche Energy Rating (Eas) 500 mJ
Pulsed Drain Current-Max (IDM) 248A
Drain to Source Breakdown Voltage 33V
Drain Current-Max (Abs) (ID) 40A
Gate to Source Voltage (Vgs) 18V
Continuous Drain Current (ID) 62A
Turn-Off Delay Time 41 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Current - Continuous Drain (Id) @ 25°C 62A Tc
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 15m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 110W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ