IRF8304MTR1PBF
RoHS
/
Package DirectFET? Isometric MX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 28A MX
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Rds On Max 2.2 mΩ
Drain to Source Resistance 3.2mOhm
Input Capacitance 4.7nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 170A
Turn-Off Delay Time 19 ns
Fall Time (Typ) 13 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Rise Time 22ns
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 28A Ta 170A Tc
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 15V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Rds On (Max) @ Id, Vgs 2.2mOhm @ 28A, 10V
FET Type N-Channel
Turn On Delay Time 16 ns
Power Dissipation 2.8W
Power Dissipation-Max 2.8W Ta 100W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2013
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package DIRECTFET? MX
Number of Pins 7
Package / Case DirectFET? Isometric MX
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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