IRF8113
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 17.2A 8-SOIC
PDF
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Buying Options
Total Price: USD $0.39
Unit Price: USD $0.3876
≥1 USD $0.3876
≥10 USD $0.31825
≥100 USD $0.3078
≥500 USD $0.2983
≥1000 USD $0.28785
Inventory: 6689
Minimum: 1
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Technical Details
Technical
Drain-source On Resistance-Max 0.0056Ohm
Pulsed Drain Current-Max (IDM) 135A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 48 mJ
Drain Current-Max (Abs) (ID) 17.2A
JEDEC-95 Code MS-012AA
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 17.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 2910pF @ 15V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 5.6m Ω @ 17.2A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-G8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Terminal Finish NOT SPECIFIED
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2005
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status Non-RoHS Compliant
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Alternative Model
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