IRF7700
RoHS
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Package 8-TSSOP (0.173, 4.40mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 8.6A 8-TSSOP
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Buying Options
Total Price: USD $11.61
Unit Price: USD $11.6147
≥1 USD $11.6147
≥10 USD $9.5304
≥100 USD $9.2321
≥500 USD $8.93475
≥1000 USD $8.63645
Inventory: 1139
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.5W Tc
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 8.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.6A Tc
Gate Charge (Qg) (Max) @ Vgs 89nC @ 5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
JEDEC-95 Code MO-153AA
Drain Current-Max (Abs) (ID) 8.6A
Drain-source On Resistance-Max 0.015Ohm
Pulsed Drain Current-Max (IDM) 68A
DS Breakdown Voltage-Min 20V
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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