FF800R12KE3
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Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1.2KV 1200A 10-pin IHM130-2
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Technical Details
Physical
Surface Mount NO
Number of Terminals 10
Transistor Element Material SILICON
Technical
Pbfree Code icon-pbfree no
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 10
JESD-30 Code R-XUFM-X10
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3900W
Turn On Time 880 ns
Collector Current-Max (IC) 1200A
Turn Off Time-Nom (toff) 1140 ns
Collector-Emitter Voltage-Max 1200V
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.15 V
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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