FET Feature Schottky Diode (Isolated)
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) -1.7A
Turn-Off Delay Time 38 ns
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 15V
Vgs(th) (Max) @ Id 700mV @ 250μA
Rds On (Max) @ Id, Vgs 270m Ω @ 1.2A, 4.5V
Turn On Delay Time 9.1 ns
Element Configuration Single
Power Dissipation-Max 1.25W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 2 (1 Year)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ