Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -10A
Turn-Off Delay Time 59 ns
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 20m Ω @ 5.6A, 10V
Operating Mode ENHANCEMENT MODE
Technology MOSFET (Metal Oxide)
Max Power Dissipation 2.5W
Subcategory Other Transistors
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)