IRF6798MTRPBF
RoHS
/
Package DirectFET? Isometric MX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 37A DIRECTFET-MX
PDF
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Buying Options
Total Price: USD $0.89
Unit Price: USD $0.8854
≥1 USD $0.8854
≥10 USD $0.72675
≥100 USD $0.70395
≥500 USD $0.68115
≥1000 USD $0.65835
Inventory: 1141
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 5.05mm
Length 6.35mm
Height 506μm
Technical
FET Feature Schottky Diode (Body)
Avalanche Energy Rating (Eas) 220 mJ
Pulsed Drain Current-Max (IDM) 300A
Drain to Source Breakdown Voltage 25V
Drain-source On Resistance-Max 0.0013Ohm
Drain Current-Max (Abs) (ID) 197A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 37A
Turn-Off Delay Time 20 ns
Fall Time (Typ) 16 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 31ns
Gate Charge (Qg) (Max) @ Vgs 75nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 37A Ta 197A Tc
Input Capacitance (Ciss) (Max) @ Vds 6560pF @ 13V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Rds On (Max) @ Id, Vgs 1.3m Ω @ 37A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 15 ns
Case Connection DRAIN
Power Dissipation 78W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.8W Ta 78W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-XBCC-N3
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2008
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 5
Package / Case DirectFET? Isometric MX
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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