IRF6711STRPBF
RoHS 
RoHS compliant
RoHS compliantPackage DirectFET? Isometric SQ
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 19A DIRECTFET-SQ
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Total Price: USD $0.77
Unit Price: USD $0.7744
≥1 USD $0.7744
Inventory: 1135
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric SQ
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 7.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1810pF @ 13V
Current - Continuous Drain (Id) @ 25°C 19A Ta 84A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 13 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.4 ns
Turn-Off Delay Time 7.1 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 84A
Drain-source On Resistance-Max 0.0038Ohm
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 62 mJ
Dimensions
Height 506μm
Length 4.826mm
Width 3.95mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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