Avalanche Energy Rating (Eas) 29 mJ
Pulsed Drain Current-Max (IDM) 45A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.035Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5.7mA
Turn-Off Delay Time 18 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.7A Ta 25A Tc
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 25V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Rds On (Max) @ Id, Vgs 35m Ω @ 5.7A, 10V
Transistor Application SWITCHING
Turn On Delay Time 9.2 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.2W Ta 42W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ