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IRF6645TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric SJ
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 5.7A DIRECTFET
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Inventory: 38404
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Dimensions

Width 3.95mm
Length 3.95mm
Height 410μm

Technical

Avalanche Energy Rating (Eas) 29 mJ
Pulsed Drain Current-Max (IDM) 45A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.035Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5.7mA
Turn-Off Delay Time 18 ns
Fall Time (Typ) 5.1 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 5 ns
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.7A Ta 25A Tc
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 25V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Rds On (Max) @ Id, Vgs 35m Ω @ 5.7A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 9.2 ns
Case Connection DRAIN
Power Dissipation 42W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.2W Ta 42W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-XBCC-N3
Current Rating 5.7A
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 100V
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e1
Series HEXFET?
Published 2008
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 7
Package / Case DirectFET? Isometric SJ
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin

Supply Chain

Factory Lead Time 12 Weeks

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