STP18NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
STMICROELECTRONICS STP18NM60N Power MOSFET, N Channel, 13 A, 600 V, 0.26 ohm, 10 V, 3 V
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Buying Options
Total Price: USD $2.31
Unit Price: USD $2.3144
≥1 USD $2.3144
≥10 USD $1.860672
≥100 USD $1.530936
≥500 USD $1.295378
≥1000 USD $1.099111
≥3000 USD $1.044155
Inventory: 1165
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.6mm
Length 10.4mm
Height 15.75mm
Technical
Pulsed Drain Current-Max (IDM) 52A
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Threshold Voltage 3V
Continuous Drain Current (ID) 13A
Turn-Off Delay Time 55 ns
Fall Time (Typ) 25 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 15ns
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 285m Ω @ 6.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 12 ns
Power Dissipation 110W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 110W Tc
Number of Elements 1
Pin Count 3
Base Part Number STP18N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 285mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series MDmesh? II
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 16 Weeks
Alternative Model
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