Avalanche Energy Rating (Eas) 86 mJ
Pulsed Drain Current-Max (IDM) 228A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8.3A
Turn-Off Delay Time 34 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10.3A Ta 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
Vgs(th) (Max) @ Id 4.8V @ 150μA
Rds On (Max) @ Id, Vgs 13m Ω @ 10.3A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.8W Ta 89W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ