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IRF6644TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric MN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 10.3A DIRECTFET
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Buying Options
Total Price: USD $1.23
Unit Price: USD $1.232
≥1 USD $1.232
Inventory: 602425
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 5.0546mm
Length 6.35mm
Height 508μm

Technical

Nominal Vgs 4.8 V
Avalanche Energy Rating (Eas) 86 mJ
Pulsed Drain Current-Max (IDM) 228A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4.8V
Continuous Drain Current (ID) 8.3A
Turn-Off Delay Time 34 ns
Fall Time (Typ) 16 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 26 ns
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10.3A Ta 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
Vgs(th) (Max) @ Id 4.8V @ 150μA
Rds On (Max) @ Id, Vgs 13m Ω @ 10.3A, 10V
FET Type N-Channel
Turn On Delay Time 17 ns
Case Connection DRAIN
Power Dissipation 89W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.8W Ta 89W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-XBCC-N3
Current Rating 10.3A
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 100V
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e1
Series HEXFET?
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 5
Package / Case DirectFET? Isometric MN
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 12 Weeks

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