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IPT65R033G7XTMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerSFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 69A HSOF-8
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Buying Options
Total Price: USD $23.92
Unit Price: USD $23.923447
≥1 USD $23.923447
≥10 USD $23.00251
≥100 USD $42.68255
≥500 USD $41.306
≥1000 USD $39.9285
Inventory: 11
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerSFN
Manufacturer Package Identifier PG-HSOF-8

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series CoolMOS? C7
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 391W Tc
Power Dissipation 391W
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 33m Ω @ 28.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.44mA
Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 400V
Current - Continuous Drain (Id) @ 25°C 69A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 69A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 650V
Max Junction Temperature (Tj) 150°C

Dimensions

Height 2.4mm

Compliance

RoHS Status ROHS3 Compliant

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