IRF6644TR1
RoHS
/
Package DirectFET? Isometric MN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V DIRECTFET-MN
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 86 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 228A
Drain-source On Resistance-Max 0.013Ohm
Drain Current-Max (Abs) (ID) 10A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10.3A Ta 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
Vgs(th) (Max) @ Id 4.8V @ 150μA
Rds On (Max) @ Id, Vgs 13m Ω @ 10.3A, 10V
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.8W Ta 89W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-XBCC-N3
Terminal Form NO LEAD
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Additional Feature LOW CONDUCTION LOSS
Number of Terminations 3
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Series HEXFET?
Published 2005
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case DirectFET? Isometric MN
Mounting Type Surface Mount
Alternative Model
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