R8002ANX
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 2A TO-220FM
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Buying Options
Total Price: USD $15.85
Unit Price: USD $15.8479
≥1 USD $15.8479
≥10 USD $13.0036
≥100 USD $12.597
≥500 USD $12.19135
≥1000 USD $11.78475
Inventory: 1293
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 0.265 mJ
Pulsed Drain Current-Max (IDM) 8A
Drain to Source Breakdown Voltage 800V
Drain Current-Max (Abs) (ID) 2A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 33 ns
Fall Time (Typ) 70 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 20ns
Gate Charge (Qg) (Max) @ Vgs 12.7nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 4.3 Ω @ 1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 17 ns
Case Connection ISOLATED
Power Dissipation 35W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 35W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Published 2012
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 10 Weeks
Alternative Model
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