Avalanche Energy Rating (Eas) 65 mJ
Drain to Source Breakdown Voltage 20V
Drain-source On Resistance-Max 0.0056Ohm
Drain Current-Max (Abs) (ID) 69A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16A
Turn-Off Delay Time 8.4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 16A Ta 69A Tc
Input Capacitance (Ciss) (Max) @ Vds 1410pF @ 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 5.6m Ω @ 16A, 10V
Transistor Application SWITCHING
Turn On Delay Time 6.9 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.3W Ta 42W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ