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IRFB52N15DPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 150V 51A TO-220AB
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Buying Options
Total Price: USD $1.81
Unit Price: USD $1.81165
≥1 USD $1.81165
≥10 USD $1.70911
≥100 USD $1.61237
≥500 USD $1.5211
≥1000 USD $1.435
≥3000 USD $1.35377
Inventory: 7305
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 32Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Current Rating 51A
Number of Elements 1
Power Dissipation-Max 3.8W Ta 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 320W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Rise Time 47 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 240A
Dual Supply Voltage 150V
Avalanche Energy Rating (Eas) 470 mJ
Recovery Time 210 ns
Nominal Vgs 5 V

Dimensions

Height 16.51mm
Length 10.66mm
Width 4.82mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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