IRF5802TR
RoHS
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Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 0.9A 6-TSOP
PDF
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Buying Options
Total Price: USD $0.35
Unit Price: USD $0.3496
≥1 USD $0.3496
≥10 USD $0.2869
≥100 USD $0.2774
≥500 USD $0.26885
≥1000 USD $0.2603
Inventory: 196540
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Transistor Element Material SILICON
Technical
Packaging Cut Tape (CT)
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 540mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 88pF @ 25V
Current - Continuous Drain (Id) @ 25°C 900mA Ta
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Drain to Source Voltage (Vdss) 150V
JEDEC-95 Code MO-193AA
Drain Current-Max (Abs) (ID) 0.9A
Pulsed Drain Current-Max (IDM) 7A
DS Breakdown Voltage-Min 150V
Avalanche Energy Rating (Eas) 9.5 mJ
Power Dissipation-Max (Abs) 2W
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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