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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 17A TO-220AB
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Buying Options
Total Price: USD $0.8
Unit Price: USD $0.8008
≥1 USD $0.8008
≥10 USD $0.640816
≥100 USD $0.507848
≥500 USD $0.430426
≥1000 USD $0.350636
≥3000 USD $0.330079
Inventory: 25526
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.69mm
Length 10.5156mm
Height 8.77mm

Technical

Nominal Vgs 4 V
Recovery Time 140 ns
Dual Supply Voltage 100V
Pulsed Drain Current-Max (IDM) 60A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 35 ns
Fall Time (Typ) 25 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 22ns
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 90m Ω @ 9A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 9.2 ns
Case Connection DRAIN
Power Dissipation 70W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 70W Tc
Number of Elements 1
Lead Pitch 2.54mm
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 17A
Peak Reflow Temperature (Cel) 250
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 100V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Resistance 90MOhm
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2001
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

Supply Chain

Factory Lead Time 12 Weeks

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