IRF3707LPBF
RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 62A TO-262
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Rds On Max 12.5 mΩ
Drain to Source Resistance 17mOhm
Input Capacitance 1.99nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 62A
Turn-Off Delay Time 11.8 ns
Fall Time (Typ) 3.3 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Rise Time 78ns
Gate Charge (Qg) (Max) @ Vgs 19nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 62A Tc
Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 12.5mOhm @ 15A, 10V
FET Type N-Channel
Power Dissipation 87W
Element Configuration Single
Power Dissipation-Max 87W Tc
Current Rating 62A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 30V
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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