IRF2807ZS
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 75A D2PAK
PDF
/
Buying Options
Total Price: USD $1.42
Unit Price: USD $1.42405
≥1 USD $1.42405
≥10 USD $1.1685
≥100 USD $1.1324
≥500 USD $1.09535
≥1000 USD $1.05925
Inventory: 32694
Minimum: 1
-
+
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 170W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.4m Ω @ 53A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3270pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0094Ohm
Pulsed Drain Current-Max (IDM) 350A
DS Breakdown Voltage-Min 75V
Avalanche Energy Rating (Eas) 200 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
Recommended For You
IRF2807ZS+price,IRF2807ZS+datasheet,IRF2807ZS+in stock,buy+IRF2807ZS,finder+IRF2807ZS,IRF2807ZS+tutorials,IRF2807ZS+download