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FP75R07N2E4

Infineon
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT Modules IGBT Module 75A 650V
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status RoHS Compliant

Technical

Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 320 ns
Turn On Time 45 ns
Collector Emitter Saturation Voltage 1.95V
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 650V
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Case Connection ISOLATED
Power Dissipation 250W
Configuration COMPLEX
Number of Elements 7
Pin Count 31
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
ECCN Code EAR99
Number of Terminations 31
Pbfree Code yes

Physical

Number of Pins 31
Package / Case Module
Mount Screw

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