Avalanche Energy Rating (Eas) 340 mJ
DS Breakdown Voltage-Min 75V
Pulsed Drain Current-Max (IDM) 280A
Drain-source On Resistance-Max 0.013Ohm
Drain Current-Max (Abs) (ID) 75A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 75V
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Current - Continuous Drain (Id) @ 25°C 82A Tc
Input Capacitance (Ciss) (Max) @ Vds 3820pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 13m Ω @ 43A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 230W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ