Drain to Source Breakdown Voltage 100V
Drain Current-Max (Abs) (ID) 6.5A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 44A
Turn-Off Delay Time 26 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta 44A Tc
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 28m Ω @ 44A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 135W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ