IRF1902GTRPBF
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET,20V,4.2A,85 MOHM,5 NC QG,SO-8,HALOGEN-FREE
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Technical Details
Compliance
RoHS Status RoHS Compliant
Dimensions
Width 3.9878mm
Length 4.9784mm
Technical
Rds On Max 85 mΩ
Drain to Source Resistance 85mOhm
Input Capacitance 310pF
Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 4.2A
Turn-Off Delay Time 23 ns
Fall Time (Typ) 19 ns
Drain to Source Voltage (Vdss) 20V
Rise Time 13ns
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 15V
Vgs(th) (Max) @ Id 700mV @ 250μA
Rds On (Max) @ Id, Vgs 85mOhm @ 4A, 4.5V
FET Type N-Channel
Turn On Delay Time 5.9 ns
Power Dissipation 2.5W
Element Configuration Single
Technology MOSFET (Metal Oxide)
Max Power Dissipation 2.5W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2014
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package 8-SO
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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