IRF1404ZGPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 180A TO220AB
PDF
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Buying Options
Total Price: USD $20.38
Unit Price: USD $20.37655
≥1 USD $20.37655
≥10 USD $16.72
≥100 USD $16.1975
≥500 USD $15.675
≥1000 USD $15.1525
Inventory: 1234
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 16.51mm
Technical
Rds On Max 3.7 mΩ
Drain to Source Resistance 3.7mOhm
Input Capacitance 4.34nF
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 75A
Turn-Off Delay Time 36 ns
Fall Time (Typ) 58 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 40V
Rise Time 110ns
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 3.7mOhm @ 75A, 10V
FET Type N-Channel
Turn On Delay Time 18 ns
Power Dissipation 220W
Element Configuration Single
Power Dissipation-Max 220W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2010
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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