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IPS09N03LB G

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-251-3 Stub Leads, IPak
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 50A IPAK
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Avalanche Energy Rating (Eas) 57 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 200A
Drain-source On Resistance-Max 0.0144Ohm
Drain Current-Max (Abs) (ID) 50A
JEDEC-95 Code TO-251AA
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 15V
Vgs(th) (Max) @ Id 2V @ 20μA
Rds On (Max) @ Id, Vgs 9.3m Ω @ 50A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 58W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish MATTE TIN
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
JESD-609 Code e3
Series OptiMOS?
Published 2008
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-251-3 Stub Leads, IPak
Mounting Type Through Hole

Alternative Model

SD2010S040S3R0

SD2010S040S3R0

AVX Corporation

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