IPP050N06N G
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 100A TO-220
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Buying Options
Total Price: USD $1.27
Unit Price: USD $1.27395
≥1 USD $1.27395
≥10 USD $1.045
≥100 USD $1.0127
≥500 USD $0.97945
≥1000 USD $0.94715
Inventory: 1117
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series OptiMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code compliant
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 30V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 167nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.005Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 810 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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