Avalanche Energy Rating (Eas) 8 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 34.4A
Drain-source On Resistance-Max 0.072Ohm
Continuous Drain Current (ID) 14.4A
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14.4A Ta
Input Capacitance (Ciss) (Max) @ Vds 454pF @ 50V
Vgs(th) (Max) @ Id 3.8V @ 250μA
Rds On (Max) @ Id, Vgs 59m Ω @ 5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 20.2W Tc
Base Part Number CSD19538
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ