IPD082N10N3GATMA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 80A TO252-3
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Buying Options
Total Price: USD $1.78
Unit Price: USD $1.7776
≥1 USD $1.7776
≥10 USD $1.47664
≥100 USD $1.175064
≥500 USD $0.994294
≥1000 USD $0.843647
Inventory: 8596
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 110 mJ
Drain-source On Resistance-Max 0.0082Ohm
Max Dual Supply Voltage 100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 31 ns
Fall Time (Typ) 8 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Rise Time 42 ns
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 50V
Vgs(th) (Max) @ Id 3.5V @ 75μA
Rds On (Max) @ Id, Vgs 8.2m Ω @ 73A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 18 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 125W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series OptiMOS?
Published 2010
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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