BUZ31 E3046
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 14.5A TO262-3
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Technical Details
Technical
Avalanche Energy Rating (Eas) 200 mJ
DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 54A
Drain-source On Resistance-Max 0.2Ohm
Drain Current-Max (Abs) (ID) 13.5A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 14.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 1120pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 200m Ω @ 9A, 5V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 95W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Reach Compliance Code unknown
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Terminal Finish MATTE TIN
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series SIPMOS?
Published 2005
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Alternative Model
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