BTS113ANKSA1
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 60V 11.5A 3-Pin(3+Tab) TO-220AB
PDF
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Buying Options
Total Price: USD $0.46
Unit Price: USD $0.461877
≥1 USD $0.461877
≥10 USD $0.435726
≥100 USD $0.411071
≥500 USD $0.387796
≥1000 USD $0.365845
Inventory: 965
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series TEMPFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 5.8A, 4.5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11.5A Tc
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±10V
Continuous Drain Current (ID) 11.5A
JEDEC-95 Code TO-220AB
Pulsed Drain Current-Max (IDM) 46A
DS Breakdown Voltage-Min 60V
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Alternative Model
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