EMD59T2R
RoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description
TRANS NPN/PNP PREBIAS 0.15W EMT6
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Buying Options
Total Price: USD $0.86
Unit Price: USD $0.85975
≥1 USD $0.85975
≥10 USD $0.7049
≥100 USD $0.68305
≥500 USD $0.6612
≥1000 USD $0.63935
Inventory: 34318
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Resistor - Emitter Base (R2) 47k Ω
Resistor - Base (R1) 10k Ω
Frequency - Transition 250MHz
Max Breakdown Voltage 50V
Transition Frequency 250MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 5mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 150mV
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Polarity/Channel Type NPN AND PNP
Transistor Application SWITCHING
Power - Max 150mW
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Number of Elements 2
JESD-30 Code R-PDSO-F6
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Max Power Dissipation 150mW
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Cut Tape (CT)
Physical
Transistor Element Material SILICON
Package / Case SOT-563, SOT-666
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 10 Weeks
Alternative Model
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