PHP3055E,127
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 10.3A TO220AB
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Buying Options
Total Price: USD $4.9
Unit Price: USD $4.89725
≥1 USD $4.89725
≥10 USD $4.0185
≥100 USD $3.8931
≥500 USD $3.76675
≥1000 USD $3.64135
Inventory: 20205
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series TrenchMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 33W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.3A Tc
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 10.3A
Drain-source On Resistance-Max 0.15Ohm
Pulsed Drain Current-Max (IDM) 41A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 25 mJ
Turn Off Time-Max (toff) 130ns
Turn On Time-Max (ton) 80ns
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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