Pulsed Drain Current-Max (IDM) 2.72A
Drain Current-Max (Abs) (ID) 0.68A
Max Dual Supply Voltage -100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 680mA
Turn-Off Delay Time 67.4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 680mA Ta
Input Capacitance (Ciss) (Max) @ Vds 146pF @ 25V
Halogen Free Halogen Free
Vgs(th) (Max) @ Id 2V @ 170μA
Rds On (Max) @ Id, Vgs 1.8 Ω @ 680mA, 10V
Turn On Delay Time 4.7 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.8W Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ