NTD85N02RG
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 24V 12A DPAK
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 85 mJ
Pulsed Drain Current-Max (IDM) 192A
Drain to Source Breakdown Voltage 24V
Drain-source On Resistance-Max 0.0052Ohm
Drain Current-Max (Abs) (ID) 12A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 85A
Turn-Off Delay Time 25 ns
Fall Time (Typ) 12 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 77ns
Gate Charge (Qg) (Max) @ Vgs 17.7nC @ 5V
Current - Continuous Drain (Id) @ 25°C 12A Ta 85A Tc
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 20V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 5.2m Ω @ 20A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 2.4W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.25W Ta 78.1W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 85A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 24V
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2007
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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