BSP296E6327
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 1.1A SOT223
PDF
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Buying Options
Total Price: USD $0.3
Unit Price: USD $0.304
≥1 USD $0.304
≥10 USD $0.24985
≥100 USD $0.24225
≥500 USD $0.2337
≥1000 USD $0.2261
Inventory: 54366
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Pulsed Drain Current-Max (IDM) 4A
Drain to Source Breakdown Voltage 100V
Drain Current-Max (Abs) (ID) 1A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.1A
Turn-Off Delay Time 37.4 ns
Fall Time (Typ) 21.4 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 7.9ns
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.1A Ta
Input Capacitance (Ciss) (Max) @ Vds 364pF @ 25V
Vgs(th) (Max) @ Id 1.8V @ 400μA
Rds On (Max) @ Id, Vgs 700m Ω @ 1.1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 1.79W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.79W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 1A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 100V
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series SIPMOS?
Published 2001
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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