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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 105A TO-220AB
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Buying Options
Total Price: USD $0.78
Unit Price: USD $0.77615
≥1 USD $0.77615
≥10 USD $0.63745
≥100 USD $0.6175
≥500 USD $0.59755
≥1000 USD $0.5776
Inventory: 1220
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 6MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 105A
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 15V
Current - Continuous Drain (Id) @ 25°C 105A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Rise Time 38 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 105A
Threshold Voltage 2.25V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 42A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 420A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 220 mJ
Recovery Time 27 ns
Nominal Vgs 2.25 V

Dimensions

Height 8.77mm
Length 10.5156mm
Width 4.69mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

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