Avalanche Energy Rating (Eas) 44 mJ
DS Breakdown Voltage-Min 20V
Pulsed Drain Current-Max (IDM) 24A
Drain-source On Resistance-Max 0.041Ohm
Drain Current-Max (Abs) (ID) 6A
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Input Capacitance (Ciss) (Max) @ Vds 1007pF @ 15V
Vgs(th) (Max) @ Id 1.2V @ 40μA
Rds On (Max) @ Id, Vgs 41m Ω @ 6A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Reference Standard AEC-Q101
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ