Avalanche Energy Rating (Eas) 550 mJ
Pulsed Drain Current-Max (IDM) 200A
Drain-source On Resistance-Max 0.0049Ohm
Drain Current-Max (Abs) (ID) 23A
Continuous Drain Current (ID) 50A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 5V
Current - Continuous Drain (Id) @ 25°C 23A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 5080pF @ 15V
Vgs(th) (Max) @ Id 2V @ 70μA
Rds On (Max) @ Id, Vgs 3.2m Ω @ 50A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.8W Ta 78W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 235
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ