Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9.3A
Turn-Off Delay Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9.3A Tc
Input Capacitance (Ciss) (Max) @ Vds 705pF @ 25V
Vgs(th) (Max) @ Id 5V @ 50μA
Rds On (Max) @ Id, Vgs 345m Ω @ 5.6A, 10V
Power Dissipation-Max 100W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ