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Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Collector-Base Capacitance-Max 12pF
VCEsat-Max 0.5 V
Collector-Emitter Voltage-Max 80V
DC Current Gain-Min (hFE) 50
Collector Current-Max (IC) 0.5A
Power Dissipation-Max (Abs) 0.35W
Transition Frequency 100MHz
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Configuration SINGLE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 10
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Subcategory Other Transistors
HTS Code 8541.21.00.95
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1
Pbfree Code icon-pbfree yes
JESD-609 Code e3

Physical

Transistor Element Material SILICON
Number of Terminals 3
Surface Mount YES

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