Drain to Source Resistance 250mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.2A
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 30V
Transistor Application SWITCHING
Turn On Delay Time 3.9 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 540mW
Subcategory FET General Purpose Power
Additional Feature HIGH RELIABILITY
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1