EPC2036
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
GANFET TRANS 100V 1A BUMPED DIE
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Buying Options
Total Price: USD $1.21
Unit Price: USD $1.2056
≥1 USD $1.2056
≥10 USD $0.98384
≥100 USD $0.765248
≥500 USD $0.648648
≥1000 USD $0.528387
Inventory: 3720
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series eGaN?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology GaNFET (Gallium Nitride)
Number of Channels 1
FET Type N-Channel
Rds On (Max) @ Id, Vgs 65mOhm @ 1A, 5V
Vgs(th) (Max) @ Id 2.5V @ 600μA
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 0.91nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -4V
Continuous Drain Current (ID) 1.7A
Drain to Source Breakdown Voltage 100V
Input Capacitance 90pF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 62mOhm
Rds On Max 65 mΩ
Dimensions
Height 815μm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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