IRFH5300TR2PBF
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 40A PQFN
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package PQFN (5x6) Single Die
Technical
Packaging Cut Tape (CT)
Published 2009
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 26 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 15V
Current - Continuous Drain (Id) @ 25°C 40A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 7.2nF
Recovery Time 51 ns
Drain to Source Resistance 1.4mOhm
Rds On Max 1.4 mΩ
Nominal Vgs 1.8 V
Dimensions
Height 838.2μm
Length 5mm
Width 5.0038mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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