Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.002Ohm
Drain Current-Max (Abs) (ID) 0.54A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 540mA
Turn-Off Delay Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Gate Charge (Qg) (Max) @ Vgs 0.87nC @ 10V
Current - Continuous Drain (Id) @ 25°C 540mA Ta
Input Capacitance (Ciss) (Max) @ Vds 30.2pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 2 Ω @ 500mA, 10V
Transistor Application SWITCHING
Turn On Delay Time 3.95 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 430mW Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ