Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Max Power Dissipation 648W
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Drain to Source Voltage (Vdss) 250V
Transistor Type N-Channel
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
FET Technology METAL-OXIDE SEMICONDUCTOR